Technology-circuit co-design in width-quantized quasi-planar double-gate SRAM

• Published in: 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005 pp. 155 - 160
• Main Authors: Ananthan, H., Roy, K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: Random access memory
• DOI: 10.1109/ICICDT.2005.1502618
• ISBN: 9780780390812; 0780390814
• ISSN: 2381-3555

SRAM is likely to remain the largest, leakiest and most process-sensitive circuit block on chip. FinFET, a width-quantized, quasi-planar, double-gate technology, has emerged as the most likely candidate to replace classical technologies around the 45nm node. This paper studies the impact of FinFET design choices on device and SRAM circuit metrics to understand how its unique properties can be suitably harnessed. Width-quantization limits SRAM sizing choices, while quasi-planarity allows increased cell current by increasing fin height. Conversely, the latter property can be exploited to increase V/sub t/ and/or decrease V/sub dd/ to achieve exponential leakage savings at constant access time. The authors explored both approaches to selecting the right combination of device structure, V/sub t/ and V/sub dd/ that achieves maximum stability and minimum leakage over the design space. Increasing V/sub t/ with fin height and body thickness improves stability, decreases variability and decreases source-drain leakage exponentially. But this necessitates the use of small t/sub ox/ to control short channel effect; this increases gate leakage exponentially. On the other hand, increasing V/sub t/ and decreasing V/sub dd/ allows the use of larger t/sub ox/ to maintain short-channel effect and control gate leakage; however, this worsens stability.