A 20dBm E-band power amplifier in SiGe BiCMOS technology

• Published in: 2012 42nd European Microwave Conference pp. 1079 - 1082
• Main Authors: Yishay, R. B., Carmon, R., Katz, O., Sheinman, B., Elad, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2012
• Subjects: Bandwidth; BiCMOS integrated circuits; Power amplifiers; Power generation; Power measurement; Silicon germanium; Transistors

This paper presents a fully integrated 71-76GHz power amplifiers (PA) fabricated in a 0.12μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21dB, 17.6dBm output power at 1dB compression, and saturated power of 20.1dBm. The modi...