Selective redundancy to improve reliability and to slow down delay degradation due to gate oxide breakdown

• Published in: 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS) pp. 12 - 15
• Main Authors: Saemrow, H., Cornelius, C., Gorski, P., Tockhorn, A., Timmermann, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2012
• Subjects: Delay; delay degradation; gate oxide breakdown; Integrated circuit reliability; Integrated circuits; Logic gates; Propagation delay; redundant systems; reliability; Reliability engineering; Transistors

Because of the aggressive scaling into the nanometer regime, degradation due to wearout significantly impairs design parameters. For instance, such wearout is caused by gate oxide breakdown, which decreases the operating lifetime of integrated circuits to an extent that cannot be neglected by circui...