A highly linear CMOS temperature sensor

• Published in: The 8th Electrical Engineering/ Electronics, Computer, Telecommunications and Information Technology (ECTI) Association of Thailand - Conference 2011 pp. 74 - 77
• Main Authors: Chun Wei Lin, Sheng Feng Lin
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2011
• Subjects: Equations; Fabrication; mobility degradation; Monitoring; Temperature measurement; temperature sensor; Temperature sensors; temperature-to-current converter; Thermal analysis; Thermal degradation; thermal monitoring; threshold voltage drift
• DOI: 10.1109/ECTICON.2011.5947774
• ISBN: 1457704250; 9781457704253

In this work, we proposed a linear CMOS temperature-to-current converter as a temperature sensor, which especially benefit on enhancing the accuracy of thermal monitoring. The proposed design achieves highly linear relationship between temperature and current by annulling the most critical nonlinear square terms of it. Through utilizing a compensation scheme among two current sources driven in saturation region with different bias voltages, the nonlinear effect originated from the temperature dependence of both mobility degradation and threshold voltage drift is cancelled. The experiment results demonstrate competitive performance. The maximum temperature error and average power consumption of temperature sensor are merely ±0.022°C and 137.6μW respectively while the die area is about 27.1μm*18.3μm under the implementation of TSMC 0.35μm CMOS process with 3.3V power supply.