High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier

By incorporating an in-situ aluminum oxide gate barrier in InAlAs/InGaAs double heterostructure FETs we have reduced the gate leakage current by more than an order of magnitude. The measured transconductance is 130 mS/mm and the device pinches off at -1.5 V. The oxide barrier is prepared by in-situ...

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Bibliographic Details
Published in1984 International Electron Devices Meeting pp. 356 - 359
Main Authors Chang, T.Y., Behringer, R.E., Howard, R.E., Liao, A.S.H., Jackel, L.D., Caridi, E.A., Skocpol, W.J., Epworth, R.W.
Format Conference Proceeding
LanguageEnglish
Published IRE 1984
Subjects
Aluminum oxide
HEMTs
Indium compounds
Indium gallium arsenide
Leakage current
MESFETs
MODFETs
Oxidation
Plasma measurements
Transconductance
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Summary:By incorporating an in-situ aluminum oxide gate barrier in InAlAs/InGaAs double heterostructure FETs we have reduced the gate leakage current by more than an order of magnitude. The measured transconductance is 130 mS/mm and the device pinches off at -1.5 V. The oxide barrier is prepared by in-situ deposition of 2 nm Al in an MBE system followed by complete oxidation in air or during exposure to an oxygen plasma. The device structure and fabrication process is readily scaled to submicron gate lengths.
DOI:10.1109/IEDM.1984.190722