Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with r...

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Bibliographic Details
Published inProceedings of IEEE International Electron Devices Meeting pp. 83 - 86
Main Authors Crabbe, E.F., Meyerson, B.S., Stork, J.M.C., Harame, D.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1993
Subjects
Annealing
Bipolar transistors
Breakdown voltage
Cutoff frequency
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Passivation
Silicon germanium
Surfaces
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Summary:Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.< >
ISBN:0780314506
9780780314504
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347393