Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications

The metal-oxide-nitride-oxide-silicon (MONOS) nonvolatile memories (NVM) are attracting much attention for analog memory applications such as compute-in-memory [1]. The effect of ferroelectric thin films as a blocking layer (BL) or charge trapping layer (CTL) in the MONOS structure has been reported...

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Bibliographic Details
Published in2021 Device Research Conference (DRC) pp. 1 - 2
Main Authors Ohmi, S., Morita, H., Hayashi, M., Ihara, A., Pyo, J.Y.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 20.06.2021
Subjects
Current measurement
Electrodes
Logic gates
Nonvolatile memory
Switches
Threshold voltage
Tunneling
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Summary:The metal-oxide-nitride-oxide-silicon (MONOS) nonvolatile memories (NVM) are attracting much attention for analog memory applications such as compute-in-memory [1]. The effect of ferroelectric thin films as a blocking layer (BL) or charge trapping layer (CTL) in the MONOS structure has been reported to improve the memory characteristics such as the retention and electron injection efficiency [2] - [4]. We have reported the multi-bit/cell operation of Hf-based MONOS NVM utilizing high-k HfO 2 (HK-HfO 2 ) and HfN 1.1 dielectric layers formed by the in situ process from HfO 2 tunneling layer (TL) to HfN 0.5 gate electrode utilizing electron cyclotron resonance (ECR) plasma sputtering [5] - [6]. In this paper, we have investigated the ferroelectric nondoped HfO 2 (Fe-HfO 2 ) BL formation on the HfN x CTL in the MONOS diode structure for the analog memory application, so called FeNOS, as shown in Fig. 1(a). The FeNOS would realize the analog control of threshold voltage (V TH ) by the partial polarization of Fe-HfO 2 BL along with the multi-bit/cell operation by the charge trap in the HfN x CTL as shown in Fig. 1(b).
ISSN:2640-6853
DOI:10.1109/DRC52342.2021.9467182