Proposal of a novel semiconductor optical waveguide isolator
A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By no...
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Published in | Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) pp. 289 - 292 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English Japanese |
Published |
IEEE
20.01.2003
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Subjects | |
Online Access | Get full text |
ISBN | 9780780355620 0780355628 |
ISSN | 1092-8669 |
DOI | 10.1109/ICIPRM.1999.773691 |
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Abstract | A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 /spl mu/m wavelength, wide operation wavelength range, and large fabrication tolerance. |
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AbstractList | A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 /spl mu/m wavelength, wide operation wavelength range, and large fabrication tolerance. |
Author | Nakano, Y. Takenaka, M. |
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PublicationTitle | Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) |
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Snippet | A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a... |
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StartPage | 289 |
SubjectTerms | Isolators Magnetooptic effects Optical refraction Optical variables control Optical waveguides Proposals Refractive index Semiconductor optical amplifiers Semiconductor waveguides Stimulated emission |
Title | Proposal of a novel semiconductor optical waveguide isolator |
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