Investigation of Single Event Effect Susceptibility of Inner Memory Blocks in 28 nm Xilinx SoC Using 239Pu

Single event upset (SEU) susceptibility of memory blocks in 28nm Xilinx Zynq-7000 All Programmable SoC was investigated using an alpha radioactive source 239 Pu. The tested memory blocks included on chip memory (OCM), Register, D-Cache and BRAM. The upset addresses and bits were detected using our d...

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Bibliographic Details
Published in2018 International Conference on Radiation Effects of Electronic Devices (ICREED) pp. 1 - 4
Main Authors Yonghong, Li, Weitao, Yang, Chaohui, He, Yang, Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
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