Investigation of Single Event Effect Susceptibility of Inner Memory Blocks in 28 nm Xilinx SoC Using 239Pu

• Published in: 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) pp. 1 - 4
• Main Authors: Yonghong, Li, Weitao, Yang, Chaohui, He, Yang, Li
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2018
• Subjects: Alpha Particles; Single Event Functional Interrupt; Single Event Upset; System-on-Chip
• DOI: 10.1109/ICREED.2018.8905095

Single event upset (SEU) susceptibility of memory blocks in 28nm Xilinx Zynq-7000 All Programmable SoC was investigated using an alpha radioactive source 239 Pu. The tested memory blocks included on chip memory (OCM), Register, D-Cache and BRAM. The upset addresses and bits were detected using our designed SEU test system, meanwhile, the upset data were recovered by this system. Results show that the upsets were single bit upset and the recovery rate achieved 100%. Moreover, the cross sections were obtained, at 10 −7 cm 2 level.