Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Intrinsic electrical and excitonic properties of monolayer transition‐metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid‐state back...

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Published inAdvanced materials (Weinheim) Vol. 28; no. 30; pp. 6457 - 6464
Main Authors Liu, Bo, Zhao, Weijie, Ding, Zijing, Verzhbitskiy, Ivan, Li, Linjun, Lu, Junpeng, Chen, Jianyi, Eda, Goki, Loh, Kian Ping
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 10.08.2016
Subjects
bandgap renormalization
CYTOP substrate
excitons
monolayer transition-metal dichalcogenides
phase-space filling effect
monolayer transition-metal dichalcogenides
phase-space filling effect
excitons
bandgap renormalization
CYTOP substrate
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Summary:Intrinsic electrical and excitonic properties of monolayer transition‐metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid‐state back gates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.
Bibliography:istex:20DD5E4546C9F8F8D70DBA85B4D24514C6130826
ArticleID:ADMA201504876
ark:/67375/WNG-2BGXC4C6-4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201504876