Characteristics of post-annealed SrTiO3 thin films prepared by mirror-confinement-type ECR plasma sputtering

SrTiO 3 films were synthesized on Pt/Ti/SiO 2 /Si multilayer substrates by mirror-confinement-type ECR plasma sputtering without substrate heating. All films were found to be well crystallized at a substrate temperature below 450 K. A low temperature post-annealing of the films by electromagnetic-wa...

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Published inScience and technology of advanced materials Vol. 1; no. 4; pp. 211 - 217
Main Authors Baba, So, Numata, Ken, Miyake, Shoji
Format Journal Article
LanguageEnglish
Published Taylor & Francis 01.01.2000
IOP Publishing
Subjects
Electromagnetic-wave radiation
Low temperature synthesis
Mirror-confinement-type ECR plasma sputtering
Post-annealing
SrTiO
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Abstract SrTiO 3 films were synthesized on Pt/Ti/SiO 2 /Si multilayer substrates by mirror-confinement-type ECR plasma sputtering without substrate heating. All films were found to be well crystallized at a substrate temperature below 450 K. A low temperature post-annealing of the films by electromagnetic-wave radiation drastically improved the crystallographic and electric properties of Pt/SrTiO 3 /Pt/Ti/SiO 2 /Si capacitors. The crystallinity of the films indicated little variation by post-annealing, but irradiation of electromagnetic wave was confirmed to be effective for decreasing the post-annealing time and temperature. The electric properties of films annealed without Pt upper electrodes were better than those with them, and the film dielectric constant reached a value of 260, which is nearly equal to thebulk one, at an annealing temperature of 573 K.
AbstractList SrTiO 3 films were synthesized on Pt/Ti/SiO 2 /Si multilayer substrates by mirror-confinement-type ECR plasma sputtering without substrate heating. All films were found to be well crystallized at a substrate temperature below 450 K. A low temperature post-annealing of the films by electromagnetic-wave radiation drastically improved the crystallographic and electric properties of Pt/SrTiO 3 /Pt/Ti/SiO 2 /Si capacitors. The crystallinity of the films indicated little variation by post-annealing, but irradiation of electromagnetic wave was confirmed to be effective for decreasing the post-annealing time and temperature. The electric properties of films annealed without Pt upper electrodes were better than those with them, and the film dielectric constant reached a value of 260, which is nearly equal to thebulk one, at an annealing temperature of 573 K.
Author Miyake, Shoji
Numata, Ken
Baba, So
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Snippet SrTiO 3 films were synthesized on Pt/Ti/SiO 2 /Si multilayer substrates by mirror-confinement-type ECR plasma sputtering without substrate heating. All films...
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StartPage 211
SubjectTerms Electromagnetic-wave radiation
Low temperature synthesis
Mirror-confinement-type ECR plasma sputtering
Post-annealing
SrTiO
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Title Characteristics of post-annealed SrTiO3 thin films prepared by mirror-confinement-type ECR plasma sputtering
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