Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

The doping technique is vital for applying two-dimensional (2D) materials such as transition metal dichalcogenide (TMDC)-based field effect transistors (FETs), which can control the channel polarity and improve the performance. However, as conventional doping techniques for silicon-based FET are not...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 62; no. SC; p. SC1010
Main Authors Xie, Tianshun, Fukuda, Kazuki, Ke, Mengnan, Krüger, Peter, Ueno, Keiji, Kim, Gil-Ho, Aoki, Nobuyuki
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.04.2023
Japanese Journal of Applied Physics
Subjects
contact doping
Controllability
Doping
Field effect transistors
heavy doping
Irradiation
laser irradiation
Molybdenum compounds
MoTe
Performance enhancement
polarity control
Semiconductor devices
Tellurides
Transition metal compounds
Two dimensional materials
vacancy
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Summary:The doping technique is vital for applying two-dimensional (2D) materials such as transition metal dichalcogenide (TMDC)-based field effect transistors (FETs), which can control the channel polarity and improve the performance. However, as conventional doping techniques for silicon-based FET are not suitable for 2D materials, the realization of heavy doping of TMDC materials is challenging, especially for n-type heavy doping. This study reports a simple, regioselective, controllable, and chemically stable heavy doping method for 2H-MoTe2 crystal via high-density laser irradiation. The polarity of the doping can be controlled by changing the irradiation environment. For the MoTe2-nFET, good performance with enhanced contact properties was obtained using the contact doping method via laser irradiation in a vacuum environment.
Bibliography:JJAP-S1103038.R2
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/aca67e