Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

• Published in: Advanced functional materials Vol. 26; no. 41; pp. 7486 - 7494
• Main Authors: Pešić, Milan, Hoffmann, Michael, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 02.11.2016
• Subjects: antiferroelectric RAM; antiferroelectric ZrO2; supercapacitors; universal memory

To date antiferroelectrics have not been considered as nonvolatile memory elements because a removal of the external field causes a depolarization, resulting in a loss of the stored information. In comparison to ferroelectrics, antiferroelectrics are known for their enhanced fatigue resistance. Ther...