Growth of M -plane (10-10) InN on LiAlO2 (100) substrate

• Published in: Physica status solidi. C Vol. 6; no. S2; pp. S425 - S428
• Main Authors: Takagi, Yusuke, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2009; WILEY‐VCH Verlag
• Subjects: 61.05.cp; 68.37.Hk; 68.55.Nq; 78.55.Cr; 81.15.Hi
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.200880980

In this study, we report the growth and characterization of M ‐plane InN films on LiAlO2 (100) substrates by radio‐frequency plasma assisted molecular beam epitaxy (RF‐MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M ‐plane InN films were successfully grown at a high temperature of 450 °C and under a slightly In‐rich condition, while the incorporation of C ‐plane phase was observed in M ‐plane InN films grown at low temperatures of less than 400 °C or under a N‐rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M ‐plane InN films. The in‐plane epitaxial relationships of M ‐plane InN on LiAlO2 (100) were [0001]InN // [010]LiAlO2 and [1‐210]InN // [001]LiAlO2. A surface electron accumulation layer on the obtained M ‐plane InN film is also discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)