Study of PV characteristics of AlxGa1-xAs/GaAs photodiodes

Simulation of the structure of multijunction photodiodes has been performed on the assumption that an equal of the number of photons is absorbed in them, and PV characteristics have been stadied AlxGa1-xAs/GaAs photodiodes fabricated by the molecular-beam epitaxy technique. According to the performe...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 993; no. 1
Main Authors Kalinovskiy, V S, Kontrosh, E V, Gusev, G A, Sumarokov, A N, Klimko, G V, Ivanov, S V, Yuferev, V S, Tabarov, T S, Andreev, V M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2018
Subjects
Conversion
Efficiency
Molecular beam epitaxy
Monochromatic radiation
Optical radiation
P-n junctions
Photodiodes
Physics
Radiation
Saturation
Space charge
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Summary:Simulation of the structure of multijunction photodiodes has been performed on the assumption that an equal of the number of photons is absorbed in them, and PV characteristics have been stadied AlxGa1-xAs/GaAs photodiodes fabricated by the molecular-beam epitaxy technique. According to the performed measurements and analysis of the results, it has been shown that the efficiency of single-junction photodiodes in converting monochromatic optical radiation at a wavelength of 810 nm reaches 50%. The relationship between the "saturation" currents calculated from the dark I - V characteristic for the diffusion current flow (Shockley) in the space charge region of a photodiode p-n junction and the obtained values for the efficiency of converting optical radiation in the wavelength range of 700 - 900 nm has been shown. When the "saturation" current flow for the diffusion mechanism rises by an order of magnitude, the efficiency value at excitation by monochromatic radiation at 810 nm and 780 nm drops by 25% and 11%, respectively.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/993/1/012029