Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts....
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| Published in | Advanced materials (Weinheim) Vol. 26; no. 20; pp. 3263 - 3269 |
|---|---|
| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Germany
Blackwell Publishing Ltd
28.05.2014
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 0935-9648 1521-4095 1521-4095 |
| DOI | 10.1002/adma.201305845 |
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| Abstract | We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back‐gate voltage (V
bg) and drain‐source voltage (V
ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. |
|---|---|
| AbstractList | We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back‐gate voltage (V bg) and drain‐source voltage (V ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. |
| Author | Xu, Yong Aparecido-Ferreira, Alex Lin, Yen-Fu Sun, Huabin Li, Song-Lin Ueno, Keiji Yamamoto, Mahito Nakaharai, Shu Jian, Wen-Bin Li, Wenwu Wang, Sheng-Tsung Tsukagoshi, Kazuhito |
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| Copyright | 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
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| Keywords | electronics ambipolar transistors Schottky barriers transistors |
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| Snippet | We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was... We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was... |
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| SubjectTerms | ambipolar transistors electronics Schottky barriers transistors |
| Title | Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits |
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