Ni/Au contacts to corundum α-Ga2O3

• Published in: Japanese Journal of Applied Physics Vol. 62; no. SF; p. SF1008
• Main Authors: Massabuau, Fabien C.-P., Adams, Francesca, Nicol, David, Jarman, John C., Frentrup, Martin, Roberts, Joseph W., O’Hanlon, Thomas J., Kovács, Andras, Chalker, Paul R., Oliver, R. A.
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.06.2023; Japanese Journal of Applied Physics
• Subjects: Annealing; Bilayers; Corundum; Electric contacts; Electrical properties; Gallium oxides; Gold; metal contact; Metallurgy; Oxidation; Schottky; Titanium; transmission electron microscopy

The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unli...