Ni/Au contacts to corundum α-Ga2O3

The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unli...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 62; no. SF; p. SF1008
Main Authors Massabuau, Fabien C.-P., Adams, Francesca, Nicol, David, Jarman, John C., Frentrup, Martin, Roberts, Joseph W., O’Hanlon, Thomas J., Kovács, Andras, Chalker, Paul R., Oliver, R. A.
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.06.2023
Japanese Journal of Applied Physics
Subjects
Annealing
Bilayers
Corundum
Electric contacts
Electrical properties
Gallium oxides
Gold
metal contact
Metallurgy
Oxidation
Schottky
Titanium
transmission electron microscopy
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Summary:The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni–Au bilayer dominate the electrical properties. It is found that 400 °C–450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.
Bibliography:JJAP-S1103212.R2
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acbc28