Inverse class-F X-band SiGe HBT power amplifier with 44% PAE and 24.5 dBm peak output power

• Published in: Microwave and optical technology letters Vol. 58; no. 12; pp. 2868 - 2871
• Main Authors: Song, Ickhyun, Ulusoy, Ahmet Çağrı, Oakley, Michael A., Ju, Inchan, Cho, Moon-Kyu, Cressler, John D.
• Format: Journal Article
• Language: English
• Published: New York Blackwell Publishing Ltd 01.12.2016; Wiley Subscription Services, Inc
• Subjects: Efficiency; Electric potential; Inverse; inverse class F; Microwaves; power amplifier (PA); Power amplifiers; Silicon germanides; silicon-germanium (SiGe); thin-film microstrip (TFMS); Voltage; weak avalanche; X-band

ABSTRACT An X‐band power amplifier (PA) implemented in a silicon‐germanium (SiGe) heterojunction bipolar transistor technology is presented. The SiGe PA was designed for inverse class‐F mode using thin‐film microstrip (TFMS) lines, eliminating the use of conventional band‐limiting lumped inductors a...