Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices

• Published in: Advanced functional materials Vol. 25; no. 40; pp. 6360 - 6368
• Main Authors: Lenser, Christian, Koehl, Annemarie, Slipukhina, Ivetta, Du, Hongchu, Patt, Marten, Feyer, Vitaliy, Schneider, Claus M., Lezaic, Marjana, Waser, Rainer, Dittmann, Regina
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.10.2015
• Subjects: hard X-ray photoelectron spectroscopy; photoemission electron microscopy; resistive switching; segregation

The resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen‐deficient, highly electron‐doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal–insulator–metal structures fabricated...