Turn-on Timescale Quenching in two State Quantum Well Lasers

• Published in: 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) p. 1
• Main Authors: Dudelev, Vladislav V., Mylnikov, Valentin Yu, Shkolanik, Alexey S., Soboleva, Ksenia K., Kuchinskii, Vladimir I., Livshits, Daniil A., Sokolovsku, Grigorii S., Viktorov, Evgeniy A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2019
• DOI: 10.1109/CLEOE-EQEC.2019.8872750

Recombination of ground state (GS) and excited state (ES) electrons and holes in semiconductor lasers may lead to simultaneous lasing at both states, which is important for applications in all-optical switches and converters used in all-optical networks. Two state lasing in quantum dot lasers has been extensively studied over the last decade [1-2]. For the pulsed pumping, it has been shown that the GS and ES turn-ons result from different physical mechanisms. Extremely fast dynamical interaction between the lasing states defines the two successive laser thresholds with significant delays between the GS and ES turn-ons [3]. In this work, we explore the simultaneous generation from GS and ES in quantum well laser under various pulsed pumping conditions.