Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping

• Published in: IEEE electron device letters Vol. 42; no. 5; pp. 688 - 691
• Main Authors: Wang, Lun, Cai, Wang, He, Da, Lin, Qi, Wan, Daixing, Tong, Hao, Miao, Xiangshui
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 1S1R; Doping; First principles; high-density memory array; Leakage currents; Ovonic threshold switching (OTS); Performance evaluation; Phase change materials; selector; Switches; Threshold voltage; Voltage measurement

In this letter, we fabricated a C-doped GeTe x Ovonic threshold switching (OTS) selector in a via-hole structure. The material composition is simple without toxic element doping. Performance of the GeTe x -based selector is improved to be comparable to commercial GeSe-based selectors through C dopin...