Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping - Wang, Lun; Cai, Wang; He, Da; Lin, Qi; Wan, Daixing; Tong, Hao; Miao, Xiangshui (IEEE electron device letters, 2021)
Keywords: 1S1R; Doping; First principles; high-density memory array; Leakage currents; Ovonic threshold switching (OTS); Performance evaluation; Phase change materials; selector; Switches; Threshold voltage; Voltage measurement