Wang, L., Cai, W., He, D., Lin, Q., Wan, D., Tong, H., & Miao, X. (2021). Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping. IEEE electron device letters, 42(5), 688-691. https://doi.org/10.1109/LED.2021.3064857
Chicago Style (17th ed.) CitationWang, Lun, Wang Cai, Da He, Qi Lin, Daixing Wan, Hao Tong, and Xiangshui Miao. "Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping." IEEE Electron Device Letters 42, no. 5 (2021): 688-691. https://doi.org/10.1109/LED.2021.3064857.
MLA (9th ed.) CitationWang, Lun, et al. "Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping." IEEE Electron Device Letters, vol. 42, no. 5, 2021, pp. 688-691, https://doi.org/10.1109/LED.2021.3064857.