APA (7th ed.) Citation

Huang, D., Shao, G., Zhang, X., & Zhou, Z. (2025). Electronic mechanism behind the influence of intercalated heteroatom Sn on the slip energy barrier in layered WS2. Nanotechnology, 36(22), . https://doi.org/10.1088/1361-6528/add166

Chicago Style (17th ed.) Citation

Huang, Dulin, Gonglei Shao, Xu Zhang, and Zhen Zhou. "Electronic Mechanism Behind the Influence of Intercalated Heteroatom Sn on the Slip Energy Barrier in Layered WS2." Nanotechnology 36, no. 22 (2025). https://doi.org/10.1088/1361-6528/add166.

MLA (9th ed.) Citation

Huang, Dulin, et al. "Electronic Mechanism Behind the Influence of Intercalated Heteroatom Sn on the Slip Energy Barrier in Layered WS2." Nanotechnology, vol. 36, no. 22, 2025, https://doi.org/10.1088/1361-6528/add166.