A novel approach for measuring ultra-thin, buried SiO2 film thickness

• Published in: Surface and interface analysis Vol. 41; no. 11; pp. 893 - 896
• Main Authors: Jiang, Z. X., Sieloff, D. D.
• Format: Journal Article
• Language: English
• Published: Chichester, UK John Wiley & Sons, Ltd 01.11.2009; Wiley
• Subjects: Beams (radiation); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Incidence; Isotopes; oxide; Physics; Secondary ion mass spectrometry; Semiconductors; Silicon; Silicon dioxide; Silicon oxides; SIMS; thickness; Thin films; Thickness; SIMS; Inorganic compounds; Silicon oxides; oxide

Accurate measurement of physical thickness of thin SiO2 films is of great interest to the semiconductor industry. Existing inspection techniques are subject to large error when the oxide thickness falls below 2 nm. This work explored a new approach with improved accuracy to the measurement of thickn...