Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

• Published in: Semiconductor science and technology Vol. 19; no. 2; pp. 133 - 141
• Main Authors: Prado, A del, Andrés, E San, Mártil, I, González-Díaz, G, Kliefoth, K, Füssel, W
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.02.2004; Institute of Physics
• Subjects: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Materials science; Metal-insulator-semiconductor structures (including semiconductor-to-insulator); Physics; Treatment of materials and its effects on microstructure and properties; MIS structures; Inorganic compounds; Electron cyclotron-resonance; Aluminium; Interface states; Electronic density of states; Experimental study; Defects; CV characteristic; Dangling bonds; Charge carrier trapping; Rapid thermal annealing; Surface photovoltage; Silicon oxides; Silicon; Passivation
• DOI: 10.1088/0268-1242/19/2/001
• ISSN: 0268-1242