Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications
The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s −1 , which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions could potentially enable terahertz device...
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Published in | 2021 IEEE International Electron Devices Meeting (IEDM) pp. 4.5.1 - 4.5.4 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
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IEEE
11.12.2021
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Abstract | The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s −1 , which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions could potentially enable terahertz devices, however, the high parasitic capacitances and contact resistances in traditional ultra-scaled electronic devices, such as transistors and diodes, hinder their potential. Here we demonstrate that the fast switching of displacement fields strongly confined in a few-nanometers-thin crystal between a textured metal and an electron sheet, so called displacement-field nano-switch, can provide cut-off frequencies above 8 THz, enabling an efficient switching of terahertz signals. The device offers extremely low ON state resistances approaching 100\ \Omega\ \mu \mathrm{m} , low parasitic capacitances in range of 100\ \text{aF}\ \mu \mathrm{m}^{-1} , excellent impedance matching capability, and fast switching times down to 10 ps. We demonstrate the application of these devices for high data rate modulation and mixing. The outstanding performance and integration capability of displacement-field nano-switches pave the way towards mm-wave and terahertz integrated circuits with applications in 5G and 6G communications, among others. |
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AbstractList | The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s −1 , which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions could potentially enable terahertz devices, however, the high parasitic capacitances and contact resistances in traditional ultra-scaled electronic devices, such as transistors and diodes, hinder their potential. Here we demonstrate that the fast switching of displacement fields strongly confined in a few-nanometers-thin crystal between a textured metal and an electron sheet, so called displacement-field nano-switch, can provide cut-off frequencies above 8 THz, enabling an efficient switching of terahertz signals. The device offers extremely low ON state resistances approaching 100\ \Omega\ \mu \mathrm{m} , low parasitic capacitances in range of 100\ \text{aF}\ \mu \mathrm{m}^{-1} , excellent impedance matching capability, and fast switching times down to 10 ps. We demonstrate the application of these devices for high data rate modulation and mixing. The outstanding performance and integration capability of displacement-field nano-switches pave the way towards mm-wave and terahertz integrated circuits with applications in 5G and 6G communications, among others. |
Author | Zhu, M. Wang, T. Sohi, P. Matioli, E. Floriduz, A. Ionescu, A. M. Nikoo, M. Samizadeh Khadar, R. A. Qaderi, F. |
Author_xml | – sequence: 1 givenname: M. Samizadeh surname: Nikoo fullname: Nikoo, M. Samizadeh email: mohammad.samizadeh@epfl.ch organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 2 givenname: T. surname: Wang fullname: Wang, T. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 3 givenname: P. surname: Sohi fullname: Sohi, P. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 4 givenname: M. surname: Zhu fullname: Zhu, M. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 5 givenname: F. surname: Qaderi fullname: Qaderi, F. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 6 givenname: R. A. surname: Khadar fullname: Khadar, R. A. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 7 givenname: A. surname: Floriduz fullname: Floriduz, A. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 8 givenname: A. M. surname: Ionescu fullname: Ionescu, A. M. organization: EPFL,Lausanne,Switzerland,CH-1015 – sequence: 9 givenname: E. surname: Matioli fullname: Matioli, E. email: elison.matioli@epfl.ch organization: EPFL,Lausanne,Switzerland,CH-1015 |
BookMark | eNotj8FKAzEURaMo2Kl-gSD5ganJS17SLLWtbaXqpoK78jqTYKSTKZMRqV9vwa4uHDgHbsEuUps8Y3dSjKQU7n45m75Ih1aPQIAcOQsCLZ6xQhqDGtACnrMBSDSlkPbjihU5fwkBFh0O2POjP7Sp5mO-Xvzyacz7HVW-8akvQ_S7mr9Sasv8E_vq02ce2o7jnNPRMHM-aZvmO8WK-timfM0uA-2yvzntkL0_zdaTRbl6my8nD6syAsq-JCByStTaKgoEWzoCoYytHQCiM8YGTaoGJdBvKWirax2CECSVGAMaNWS3_93ovd_su9hQd9icfqs_wvdNpA |
ContentType | Conference Proceeding |
DBID | 6IE 6IH CBEJK RIE RIO |
DOI | 10.1109/IEDM19574.2021.9720575 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan (POP) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Electronic Library (IEL) IEEE Proceedings Order Plans (POP) 1998-present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISBN | 1665425725 9781665425728 |
EISSN | 2156-017X |
EndPage | 4.5.4 |
ExternalDocumentID | 9720575 |
Genre | orig-research |
GroupedDBID | 6IE 6IF 6IH 6IK 6IL 6IM 6IN AAJGR ABLEC ACGFS ADZIZ ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK CHZPO IEGSK IJVOP IPLJI JC5 M43 OCL RIE RIL RIO RNS |
ID | FETCH-LOGICAL-i251t-a2aa930d473afa2baa2a0367d922559667f4a3d2305ebaf474d4ff00a13082563 |
IEDL.DBID | RIE |
IngestDate | Wed Jun 26 19:25:44 EDT 2024 |
IsDoiOpenAccess | false |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-i251t-a2aa930d473afa2baa2a0367d922559667f4a3d2305ebaf474d4ff00a13082563 |
OpenAccessLink | https://infoscience.epfl.ch/record/293249/files/IEDM_DFS_infoscience.pdf |
ParticipantIDs | ieee_primary_9720575 |
PublicationCentury | 2000 |
PublicationDate | 2021-Dec.-11 |
PublicationDateYYYYMMDD | 2021-12-11 |
PublicationDate_xml | – month: 12 year: 2021 text: 2021-Dec.-11 day: 11 |
PublicationDecade | 2020 |
PublicationTitle | 2021 IEEE International Electron Devices Meeting (IEDM) |
PublicationTitleAbbrev | IEDM |
PublicationYear | 2021 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0027595 |
Score | 1.8477204 |
Snippet | The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s −1 , which demands electronic switches with cut-off... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 4.5.1 |
SubjectTerms | Capacitance Cutoff frequency Fingers Frequency measurement Performance evaluation Resistance Switches |
Title | Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications |
URI | https://ieeexplore.ieee.org/document/9720575 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07a8MwED6STO3SR1L6RkPH2rFlPay5eTWQ0iGBbEGKZQiFpNQ2hfz6nmw3aUqHbkIgS9zZ-u7k7zsBPCwlAoHm-PLGxnhMcvzmNNVeFFFcN-eCJSVB9kWMZmw85_MGPO60MNbaknxmfdcs_-Unm2Xhjsq6SlIXXjShGQe00mrtkyuueK0ADgPVfe73JqHi0h2b0NCvRx5coVIiyOAEJt9zV8SRN7_Ijb_c_irL-N_FnUJnr9UjrzsUOoOGXZ_D8Y8yg20YVzIVEpPpaEt6q6wkYrnHeSWBjeAWu_Gyz5XzYEYwjCV8SDSOEENyoCDJOjAb9KdPI6--Q8FbYeSSe2h3raIgYTLSqaZGYweClkwUdcmEEDJlOkowEeHW6JRJlrA0DQIdujo2XEQX0Fpv1vYSiImUprFlMUsFi0WiMRuSwqS4dSseK3sFbWeVxXtVJmNRG-T67-4bOHKeccyQMLyFVv5R2DvE99zcl479AiaZo4g |
link.rule.ids | 310,311,786,790,795,796,802,23958,23959,25170,27958,55109 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8JAEJ4gHtSLDzC-3YNHW_rYR_esQEEgHiDhRnbpNiEmYCzEhF_vbFtBjAdvzTbbbmba_WZ2v28W4GEqEAgUw4830tqhguE_pwLlhGGA42aM0yQnyA54PKLdMRtX4HGjhTHG5OQz49rLfC8_WUxXdqmsIUVgw4s92Eec92Sh1tqmV0yyUgOMNxud5nPfl0zYhZPAd8u-O4eo5BjSOob-99sL6sibu1pqd7r-VZjxv8M7gfpWrUdeNzh0ChUzP4OjH4UGa9AthCokIsN4TZ5nWU7Fso9zcgobwUl24WSfM-vDjGAgS1ibKOzB22RHQ5LVYdRqDp9ipzxFwZlh7LJ00PJKhl5CRahSFWiFDQhbIpGBTSc4FylVYYKpCDNapVTQhKap5ynfVrJhPDyH6nwxNxdAdChVEBka0ZTTiCcK8yHBdYqTt2SRNJdQs1aZvBeFMialQa7-br6Hg3jY7016ncHLNRxaL1meiO_fQHX5sTK3iPZLfZc7-Qv6tqbe |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=2021+IEEE+International+Electron+Devices+Meeting+%28IEDM%29&rft.atitle=Beyond+8+THz+Displacement-field+Nano-switches+for+5G+and+6G+Communications&rft.au=Nikoo%2C+M.+Samizadeh&rft.au=Wang%2C+T.&rft.au=Sohi%2C+P.&rft.au=Zhu%2C+M.&rft.date=2021-12-11&rft.pub=IEEE&rft.eissn=2156-017X&rft.spage=4.5.1&rft.epage=4.5.4&rft_id=info:doi/10.1109%2FIEDM19574.2021.9720575&rft.externalDocID=9720575 |