A digital filter model for time-domain analysis of the two-band model [resonant interband tunneling diodes]
Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an equivalent circuit for the two-band model, which describes the behavior of electron waves in RIT structures and derives digital filters which simul...
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Published in | 2000 IEEE International Conference on Semiconductor Electronics Proceedings pp. 90 - 94 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.01.2000
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Subjects | |
Online Access | Get full text |
ISBN | 9780780364301 0780364309 |
DOI | 10.1109/SMELEC.2000.932440 |
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Abstract | Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an equivalent circuit for the two-band model, which describes the behavior of electron waves in RIT structures and derives digital filters which simulate the time evolution of electron waves in RIT structures. The digital filters derived have advantages in terms of numerical stability and parallel realization. In addition, a multi-grid algorithm and an absorbing boundary are presented in order to achieve efficiency for the digital filter. Finally, an example of simulation is shown. |
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AbstractList | Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an equivalent circuit for the two-band model, which describes the behavior of electron waves in RIT structures and derives digital filters which simulate the time evolution of electron waves in RIT structures. The digital filters derived have advantages in terms of numerical stability and parallel realization. In addition, a multi-grid algorithm and an absorbing boundary are presented in order to achieve efficiency for the digital filter. Finally, an example of simulation is shown. |
Author | Suzuki, M. Sanada, H. Tsukui, Y. Nagai, N. |
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Snippet | Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an... |
SourceID | ieee |
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StartPage | 90 |
SubjectTerms | Circuit simulation Digital filters Electrons Equivalent circuits Numerical stability Parallel processing Resonance Time domain analysis Tunneling Wave functions |
Title | A digital filter model for time-domain analysis of the two-band model [resonant interband tunneling diodes] |
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