Magnetodielectric effects in Co-implanted TlInS2 and TlGaSe2 crystals

• Published in: Phase transitions Vol. 89; no. 6; pp. 568 - 577
• Main Authors: Mikailzade, F., Maksutoglu, M., Khaibullin, R.I., Valeev, V.F., Nuzhdin, V.I., Aliyeva, V.B., Mammadov, T.G.
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 02.06.2016; Taylor & Francis Ltd
• Subjects: Dielectric properties; multiferroics; Nanostructured materials; nanostructures; Phase transitions
• ISSN: 0141-1594; 1029-0338
• DOI: 10.1080/01411594.2015.1080259

The results of investigations of dielectric and magnetodielectric properties of ternary layered TlInS 2 and TlGaSe 2 ferroelectric crystals implanted with 40 keV Co + ions at the fluency of 1.0 × 10 17 ion/cm 2 are presented. The temperature dependences of the dielectric susceptibility of Co-implanted samples showed that the formation of metal nanoparticulate composite layer in the near-surface irradiated region as a result of high-fluency Co implantation causes considerable shifts of well-known successive structural phase transition points to high temperatures in heating regime. It has been revealed that the application of the magnetic field in the direction perpendicular to implanted surface results in shifting of the phase transition points to low temperature region. The observed peculiarities are considered as magnetocapacitance (magnetodielectric) effects, which appeared as a result of magnetoelectric lock-in interaction between domains of ferroelectric and ferromagnetic substances of the composite structure.