Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependenc...

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Published in2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) pp. 0068 - 0071
Main Authors Meyer, Abigail R., LaSalvia, Vincenzo, Nemeth, William, Page, Matthew, Young, David, Agarwal, Sumit, Stradins, Paul
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
Annealing
Conferences
Degradation
Gettering
Indexes
light-induced degradation
Photovoltaic systems
process-induced degradation
Silicon
Tabula Rasa
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Abstract We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.
AbstractList We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.
Author LaSalvia, Vincenzo
Agarwal, Sumit
Page, Matthew
Nemeth, William
Young, David
Stradins, Paul
Meyer, Abigail R.
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  organization: National Renewable Energy Laboratory,Golden,CO,USA,80401
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  organization: National Renewable Energy Laboratory,Golden,CO,USA,80401
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  organization: National Renewable Energy Laboratory,Golden,CO,USA,80401
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  organization: Colorado School of Mines,Golden,CO,USA,80401
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  surname: Stradins
  fullname: Stradins, Paul
  organization: National Renewable Energy Laboratory,Golden,CO,USA,80401
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Snippet We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which...
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StartPage 0068
SubjectTerms Annealing
Conferences
Degradation
Gettering
Indexes
light-induced degradation
Photovoltaic systems
process-induced degradation
Silicon
Tabula Rasa
Title Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa
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