Recent progress in Ga2O3 power devices

• Published in: Semiconductor science and technology Vol. 31; no. 3
• Main Authors: Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
• Format: Journal Article
• Language: English
• Published: IOP Publishing 18.01.2016
• Subjects: edge-defined film-fed growth; gallium oxide; halide vapor phase epitaxy; molecular beam epitaxy; power devices

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size,...