Chlorine-based dry etching of β-Ga2O3

• Published in: Semiconductor science and technology Vol. 31; no. 6
• Main Authors: Hogan, Jack E, Kaun, Stephen W, Ahmadi, Elaheh, Oshima, Yuichi, Speck, James S
• Format: Journal Article
• Language: English
• Published: IOP Publishing 14.04.2016
• Subjects: chlorine-based etch; dry etch; Ga; ICP; RIE

Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100);...