APA (7th ed.) Citation

Hogan, J. E., Kaun, S. W., Ahmadi, E., Oshima, Y., & Speck, J. S. (2016). Chlorine-based dry etching of β-Ga2O3. Semiconductor science and technology, 31(6), . https://doi.org/10.1088/0268-1242/31/6/065006

Chicago Style (17th ed.) Citation

Hogan, Jack E., Stephen W. Kaun, Elaheh Ahmadi, Yuichi Oshima, and James S. Speck. "Chlorine-based Dry Etching of β-Ga2O3." Semiconductor Science and Technology 31, no. 6 (2016). https://doi.org/10.1088/0268-1242/31/6/065006.

MLA (9th ed.) Citation

Hogan, Jack E., et al. "Chlorine-based Dry Etching of β-Ga2O3." Semiconductor Science and Technology, vol. 31, no. 6, 2016, https://doi.org/10.1088/0268-1242/31/6/065006.