A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 2S2
• Main Authors: Kaneko, Kentaro, Fujita, Shizuo, Hitora, Toshimi
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.02.2018
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.02CB18

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V−1 s−1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.