All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

• Published in: Applied physics express Vol. 9; no. 9
• Main Authors: Kokubun, Yoshihiro, Kubo, Shohei, Nakagomi, Shinji
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.09.2016

NiO/β-Ga2O3 all-oxide p-n heterojunction diodes were fabricated for the first time using p-type NiO epitaxial layers grown on n-type β-Ga2O3 substrates. The fabricated diodes exhibited good rectifying current-voltage characteristics, with a rectifying ratio greater than 108 at ±3 V. The capacitance-...