All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

NiO/β-Ga2O3 all-oxide p-n heterojunction diodes were fabricated for the first time using p-type NiO epitaxial layers grown on n-type β-Ga2O3 substrates. The fabricated diodes exhibited good rectifying current-voltage characteristics, with a rectifying ratio greater than 108 at ±3 V. The capacitance-...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 9; no. 9
Main Authors Kokubun, Yoshihiro, Kubo, Shohei, Nakagomi, Shinji
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2016
Online AccessGet full text

Cover

More Information
Summary:NiO/β-Ga2O3 all-oxide p-n heterojunction diodes were fabricated for the first time using p-type NiO epitaxial layers grown on n-type β-Ga2O3 substrates. The fabricated diodes exhibited good rectifying current-voltage characteristics, with a rectifying ratio greater than 108 at ±3 V. The capacitance-voltage measurements showed that the built-in voltage was 1.4 V. These results were discussed in terms of the energy band diagram of a type-II heterojunction, where the conduction band and valence band discontinuities were estimated to be 2.2 and 3.4 eV, respectively.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.091101