Kokubun, Y., Kubo, S., & Nakagomi, S. (2016). All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Applied physics express, 9(9), . https://doi.org/10.7567/APEX.9.091101
Chicago Style (17th ed.) CitationKokubun, Yoshihiro, Shohei Kubo, and Shinji Nakagomi. "All-oxide P-n Heterojunction Diodes Comprising P-type NiO and N-type β-Ga2O3." Applied Physics Express 9, no. 9 (2016). https://doi.org/10.7567/APEX.9.091101.
MLA (9th ed.) CitationKokubun, Yoshihiro, et al. "All-oxide P-n Heterojunction Diodes Comprising P-type NiO and N-type β-Ga2O3." Applied Physics Express, vol. 9, no. 9, 2016, https://doi.org/10.7567/APEX.9.091101.
Warning: These citations may not always be 100% accurate.