Modeling and Simulation of Ge/Si-Nanodisk Array for QD-based IB Solar Cells

• Published in: Green Photonics and Smart Photonics pp. 25 - 45
• Main Authors: Lee, Ming-Yi, Tsai, Yi-Chia, Li, Yiming, Samukawa, Seiji
• Format: Book Chapter
• Language: English
• Published: Denmark Routledge 2016; River Publishers
• Edition: 1
• Subjects: Bulk Silicon; Solar Cell; Triangular Cell; Weaker Confinement; Fem Solver; DoS; IBSC; Primitive Vectors; Metal Oxide Cores; Ge/Si-Nanodisk array; NBE; SC; Fem Method; Single Bandgap; Interdot Space; Open Circuit Voltage; Superlattice System; Higher Excited States; IBZ; Effective Bandgap; IJ; quasi-Fermi Levels; Nano Fabrication Technology; FEM; Conversion Efficiency; quasi-Fermi Energy; Band Structure; SEM
• ISBN: 8793379277; 9788793379275
• DOI: 10.1201/9781003338338-3

Acomputationally efficient finite element simulation is performed to calculate the miniband structure and DoSs for the well-ordered Ge/Si-nanodisk array. The semiconductor nanostructures are fabricated by using self-assemble bio-template and damage-free NBE technique. Within the envelop-function framework, our model surmounts theoretical approximations of the multidimensional Kronig-Penney method and accurately calculates the energy dispersion relationship. The miniband formation works as the intermediate band within the bandgap of bulk silicon band. Effects of the interdot space, the radius and thickness of the Ge/Si-nanodisk on the miniband structure, and conversion efficiency of the solar cell (SC) are discussed. The findings of this study provide a guideline for 3D QDs IBSC design.