Sinterless contacts to shallow junction InP solar cells

The authors describe two contact systems that provide low contact resistance to InP solar cells that do not require subjecting the current-carrying metallization to a postdeposition sintering process. It is shown that these two systems, one nickel-based and the other silver-based, provide contact re...

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Published inLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels pp. 318 - 321
Main Authors Weizer, V.G., Fatemi, N.S., Korenyi-Both, A.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1992
Subjects
Contacts
Etching
Heat treatment
Indium phosphide
Metallization
NASA
Photovoltaic cells
Space technology
Substrates
Thermal degradation
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Summary:The authors describe two contact systems that provide low contact resistance to InP solar cells that do not require subjecting the current-carrying metallization to a postdeposition sintering process. It is shown that these two systems, one nickel-based and the other silver-based, provide contact resistivity (R/sub c/) values in the low 10/sup -6/- Omega -cm/sup 2/ range, as fabricated, without the need for sintering. It is demonstrated that it is possible to achieve specific contact resistivities in the low 10/sup -6/- Omega -cm/sup 2/ range without compromising emitter integrity through the introduction of any of a number of metal-phosphide interlayers, including Ni/sub 3/P, AgP/sub 2/, and Au/sub 2/P/sub 3/.< >
ISBN:0780305221
9780780305229
DOI:10.1109/ICIPRM.1992.235689