Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
We have successfully determined the bulk minority-carrier lifetime in BaSi 2 epitaxial films by utilizing a drastic enhancement of lifetime by post-growth annealing at 800 °C, which is attributed to strain relaxation. From the film-thickness dependence of lifetime, we reveal that the bulk lifetime i...
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Published in | Applied physics express Vol. 6; no. 11; pp. 112302 - 112302-4 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.11.2013
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Online Access | Get full text |
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