Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

We have successfully determined the bulk minority-carrier lifetime in BaSi 2 epitaxial films by utilizing a drastic enhancement of lifetime by post-growth annealing at 800 °C, which is attributed to strain relaxation. From the film-thickness dependence of lifetime, we reveal that the bulk lifetime i...

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Bibliographic Details
Published inApplied physics express Vol. 6; no. 11; pp. 112302 - 112302-4
Main Authors Hara, Kosuke O, Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
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