Small signal impedance analysis of high efficient power devices

The semiconductors impedance is a primary electrical parameter that determines the performance of electronic devices and circuits. For this reason many papers [1,] [2], [3] discus the frequency-dependent impedance of semiconductor junctions. Subject of this contribution is the investigation of physi...

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Bibliographic Details
Published in2015 International Semiconductor Conference (CAS) pp. 229 - 232
Main Authors Tulbure, Adrian, Hutanu, Constantin, Brezeanu, Gheorghe
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.10.2015
Subjects
Circuits
Conferences
Diodes
Electronic devices
Equivalence
experimental measurement
Impedance
Impedance measurement
MOSFET
power device
Power semiconductor devices
Schottky diodes
Semiconductor device measurement
Semiconductor device modeling
semiconductor impedance
Semiconductors
small signal
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Summary:The semiconductors impedance is a primary electrical parameter that determines the performance of electronic devices and circuits. For this reason many papers [1,] [2], [3] discus the frequency-dependent impedance of semiconductor junctions. Subject of this contribution is the investigation of physical model of the diode and bipolar power semiconductor devices (silicon) in the low frequency range between 0-100kHz. The goal of this contribution is to demonstrate through experimental measurements that the impedance of the power semiconductors depends on the signal frequency, junction's geometry and properties of the electronic structure. In the paper a procedure for computing the equivalent semiconductor impedance has been described and by experiments validated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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SourceType-Conference Papers & Proceedings-2
ISBN:9781479988624
1479988626
ISSN:1545-827X
DOI:10.1109/SMICND.2015.7355217