90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

An 80GHz bandwidth distributed amplifier with 7V pp differential output swing and P O1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are r...

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Bibliographic Details
Published in2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM pp. 157 - 160
Main Authors Hoffman, J., Gosse, J. R., Shopov, S., Voinigescu, S. P., Pekarik, J. J., Camillo-Castillo, R., Jain, V., Harame, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2015
Subjects
bandpass filter
Bandwidth
distributed amplifier
FET-HBT cascode
fiberoptic transmitters
Insertion loss
instrumentation amplifier
linear broadband amplifier
Loss measurement
modulator driver
Optical switches
Optical transmitters
PIN diode
SiGe BiCMOS
Silicon germanium
switch
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Summary:An 80GHz bandwidth distributed amplifier with 7V pp differential output swing and P O1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.
DOI:10.1109/BCTM.2015.7340568