An empirical approach to accurate single wafer wet etch simulation

Optimizing wet etch recipe for meeting a target (e.g. Uniformity) typically involves the tuning of multiple parameters; a process that is time consuming and expensive (in terms of tool time, engineering time and material used). In addition, because the process is ultimately constrained by the handfu...

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Bibliographic Details
Published in2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) pp. 276 - 279
Main Authors Singh, Manish Kumar, Ping-Jung Huang, Yu Pi-Chun, Shih, Jack
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Accuracy
Chemicals
Erbium
Etching
modeling
Numerical models
Semiconductor device modeling
Substrates
wet etch
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Summary:Optimizing wet etch recipe for meeting a target (e.g. Uniformity) typically involves the tuning of multiple parameters; a process that is time consuming and expensive (in terms of tool time, engineering time and material used). In addition, because the process is ultimately constrained by the handful of nozzle test positions available due to hardware limitations, very often the final settings are suboptimal. Here, we propose a model that aims to remove such inefficiencies by providing the engineer an approach (tool/program) to simulate the operation for a wider range of parameter in a short time before committing any changes. Our experiments show that sufficient accuracy can be achieved through this method.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2015.7164494