Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm...

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Bibliographic Details
Published in2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS) pp. 299 - 302
Main Authors Shih, K., Nimura, M., Kanehira, Y., Ogashiwa, T., Mizuno, J., Shoji, S.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.01.2013
Subjects
Conferences
Drying
Fabrication
Filling
Gold
Insulating layers
Low pressure
Mechanical systems
Micromechanical devices
Silicon
Substrates
Three dimensional
Through-silicon vias
Voltage
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Summary:We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO 2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.
Bibliography:ObjectType-Article-2
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SourceType-Conference Papers & Proceedings-2
ISBN:9781467356541
1467356549
ISSN:1084-6999
DOI:10.1109/MEMSYS.2013.6474237