Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM

• Published in: 2024 IEEE International Reliability Physics Symposium (IRPS) pp. P10.EM-1 - P10.EM-5
• Main Authors: Takashima, Rina, Koike, Takeo, Itai, Shogo, Sugiyama, Hideyuki, Lee, Young Min, Toko, Masaru, Ono, Soichiro, Watanabe, Daisuke, Oikawa, Soichi, Koi, Katsuhiko, Kanaya, Hiroyuki, Nakayama, Masahiko, Nakamura, Kohji
• Format: Conference Proceeding
• Language: English
• Published: IEEE 14.04.2024
• Subjects: Degradation; Microscopy; oxygen defects; Reliability theory; Resistance; STT-MRAM; time-dependent degradation; Torque; Tunneling magnetoresistance; Voltage

Spin-transfer torque magnetic random-access memory (STT-MRAM) is a promising candidate for high-density storage-class memories by using magnetic tunnel junctions (MTJs) with small diameters. However, it is reported that reducing the MTJ diameter can result in resistance drift and degradation of tunn...