40-GHz MMICs for optical modulator driver applications

This paper presents the simulated and measured performance of 50 kHz to 40 GHz distributed amplifier MMICs. The chips were fabricated in a double-doped AlGaAs/InGaAs/AlGaAs p-HEMT technology and designed using a microstrip configuration.. The driver MMIC achieves 40-GHz bandwidth and provides 6.6 V/...

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Bibliographic Details
Published in2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 1; pp. 91 - 95 vol.1
Main Authors Virk, R.S., Camargo, E., Hajji, R., Parker, S., Benelbar, R., Notomi, S., Ohnishi, H.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2002
Subjects
Bandwidth
Distributed amplifiers
Driver circuits
Indium gallium arsenide
Lithium niobate
Microstrip
MMICs
Optical modulation
Semiconductor device measurement
Stimulated emission
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Summary:This paper presents the simulated and measured performance of 50 kHz to 40 GHz distributed amplifier MMICs. The chips were fabricated in a double-doped AlGaAs/InGaAs/AlGaAs p-HEMT technology and designed using a microstrip configuration.. The driver MMIC achieves 40-GHz bandwidth and provides 6.6 V/sub p-p/ which is ideal for lithium niobate optical modulator driver applications.
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ISBN:9780780372399
0780372395
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011566