Reliability of STT-MRAM for various embedded applications

Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencin...

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Published in2021 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 5
Main Authors Han, S. H., Lee, J. H., Suh, K. S., Nam, K. T., Jeong, D. E., Oh, S. C., Hwang, S. H., Ji, Y., Lee, K., Song, Y. J., Hong, Y. G., Jeong, G. T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2021
Subjects
Artificial intelligence
Flash-type
Magnetic materials
Magnetic switching
Microcontrollers
Perpendicular magnetic anisotropy
Reliability
SRAM-type
STT-MRAM
Switches
Tunalibility
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Abstract Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame buffer memory. However each application has different reliability challenges. In this paper, we discuss the reliability requirements for Flash-type and SRAM-type STT-MRAM, verifying superb reliability of highly tunable STT-MRAM technology.
AbstractList Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame buffer memory. However each application has different reliability challenges. In this paper, we discuss the reliability requirements for Flash-type and SRAM-type STT-MRAM, verifying superb reliability of highly tunable STT-MRAM technology.
Author Jeong, D. E.
Song, Y. J.
Hwang, S. H.
Lee, K.
Han, S. H.
Suh, K. S.
Ji, Y.
Jeong, G. T.
Lee, J. H.
Nam, K. T.
Hong, Y. G.
Oh, S. C.
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SubjectTerms Artificial intelligence
Flash-type
Magnetic materials
Magnetic switching
Microcontrollers
Perpendicular magnetic anisotropy
Reliability
SRAM-type
STT-MRAM
Switches
Tunalibility
Title Reliability of STT-MRAM for various embedded applications
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