Is there a perfect SiC MosFETs Device on an imperfect crystal?

6" Silicon Carbide substrates contain more than 10000 crystal defects per cm 2 . A large fraction of those are embedded into active SiC device structures which may cause electrical failures, alter the device performance or significantly reduce the operating life time of individual devices. In t...

Full description

Saved in:
Bibliographic Details
Published in2021 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 6
Main Authors Neyer, T., Domeij, M., Das, H., Sunkari, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2021
Subjects
4H Silicon Carbide
Basal Plane Dislocation
Crystals
Logic gates
MOSFET
SiC
Silicon carbide
Surfaces
Switches
Systems operation
Transmission Electron Microscopy
X-Ray Topography
Online AccessGet full text

Cover

More Information
Summary:6" Silicon Carbide substrates contain more than 10000 crystal defects per cm 2 . A large fraction of those are embedded into active SiC device structures which may cause electrical failures, alter the device performance or significantly reduce the operating life time of individual devices. In this work we provide insights on cause and effect of several types of crystal defects and discuss approaches how to reduce their occurrence, investigate their degradation modes and strategies to eliminate affected dies.
ISSN:1938-1891
DOI:10.1109/IRPS46558.2021.9405098